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Samsung M393B1G70BH0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
比较
Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 16ATF2G64HZ-2G3H1 16GB
总分
Samsung M393B1G70BH0-YK0 8GB
总分
Micron Technology 16ATF2G64HZ-2G3H1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3H1 16GB
报告一个错误
低于PassMark测试中的延时,ns
41
49
左右 -20% 更低的延时
更快的读取速度,GB/s
12.8
10.2
测试中的平均数值
更快的写入速度,GB/s
9.2
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
49
41
读取速度,GB/s
10.2
12.8
写入速度,GB/s
8.1
9.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
2238
Samsung M393B1G70BH0-YK0 8GB RAM的比较
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KF3200C20S4/32GX 32MB
SK Hynix HMAA4GS6AJR8N-XN 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KKN2NM-MIE 4GB
Corsair CML16GX3M2A1600C10 8GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Kingston 99U5403-468.A00LF 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Avant Technology J642GU44J2320ND 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Golden Empire CL16-16-16 D4-2400 8GB
Kingston 99U5474-028.A00LF 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMW16GX4M2K3600C16 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-2133C15-8GVK 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung T471A1K43CB1-CRC 8GB
Corsair CMV4GX3M1B1600C11 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
报告一个错误
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Bug description
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