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Samsung M393B1G70QH0-YK0 8GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Samsung M393B1G70QH0-YK0 8GB vs Crucial Technology BLM16G40C18U4BL.M8FB 16GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
Crucial Technology BLM16G40C18U4BL.M8FB 16GB 需要考虑的原因
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 52
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 28
  • 读取速度，GB/s
    9.8 left arrow 19.6
  • 写入速度，GB/s
    8.0 left arrow 15.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 3807

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
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Kingston 9905403-090.A01LF 4GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
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Kingston MSI24D4S7S7MH-16 16GB
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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Elpida EBJ40UG8BBU0-GN-F 4GB
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Smart Modular SF464128CKHI6DFSEG 4GB
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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内存RAM
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内存RAM
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SK Hynix HMT41GU7MFR8A-H9 8GB
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Team Group Inc. DDR4 2666 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM