Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-4600C19-8GTZKKC 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

G Skill Intl F4-4600C19-8GTZKKC 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

G Skill Intl F4-4600C19-8GTZKKC 8GB

需要考虑的原因
G Skill Intl F4-4600C19-8GTZKKC 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 52

左右 -206% 更低的延时
更快的读取速度，GB/s

21.2 9.8

测试中的平均数值
更快的写入速度，GB/s

17.2 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 17
读取速度，GB/s

9.8 21.2
写入速度，GB/s

8.0 17.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 3714

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70QH0-YK0 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Corsair CMW32GX4M4A2666C16 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Corsair CMK32GX4M2B3333C16 16GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

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Samsung M378B5273CH0-CH9 4GB

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Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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PNY Electronics PNY 2GB

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Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB