Samsung M393B1K70CH0-CH9 8GB vs Kingston MSI24D4S7D8MB-16 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston MSI24D4S7D8MB-16 16GB

Kingston MSI24D4S7D8MB-16 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Kingston MSI24D4S7D8MB-16 16GB

需要考虑的原因
Kingston MSI24D4S7D8MB-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

14.9 11.2

测试中的平均数值
更快的写入速度，GB/s

10.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston MSI24D4S7D8MB-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

11.2 14.9
写入速度，GB/s

8.1 10.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GS88C-32N2200 8GB

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Crucial Technology BLS16G4D26BFSE.16FE 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 99U5403-492.A00LF 8GB

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Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Kingston 9905403-011.A03LF 2GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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