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Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology DDR4 3300 2OZ 4GB

Samsung M393B1K70CH0-YH9 8GB vs A-DATA Technology DDR4 3300 2OZ 4GB

总分
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分
star star star star star
A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

差异 规格 评论

差异

Samsung M393B1K70CH0-YH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB
报告一个错误
A-DATA Technology DDR4 3300 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 49
    左右 -188% 更低的延时
  • 更快的读取速度，GB/s
    22 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 17
  • 读取速度，GB/s
    10.1 left arrow 22.0
  • 写入速度，GB/s
    7.8 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3731

Samsung M393B1K70CH0-YH9 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

A-DATA Technology DDR4 3300 2OZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
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内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
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内存RAM
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
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Kingston 99U5403-492.A00LF 8GB
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GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
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G Skill Intl F4-2133C15-8GVR 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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G Skill Intl F4-3200C15-16GTZSW 16GB
内存RAM
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A-DATA Technology DDR3 1600 4GB
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Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
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AMD R5S38G1601U2S 8GB
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Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM