Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-3200C16-16GTZSK 16GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

G Skill Intl F4-3200C16-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 49

左右 -40% 更低的延时
更快的读取速度，GB/s

15.9 10.1

测试中的平均数值
更快的写入速度，GB/s

11.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3200C16-16GTZSK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 35
读取速度，GB/s

10.1 15.9
写入速度，GB/s

7.8 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Kingston KF2666C16S4/16G 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB

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Kingston 99U5624-003.A00G 8GB

Kingston 99U5624-003.A00G 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB