Samsung M393B1K70CH0-YH9 8GB vs SK Hynix HMAA4GS6CJR8N-XN 32GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 56

左右 13% 更低的延时

SK Hynix HMAA4GS6CJR8N-XN 32GB

需要考虑的原因
SK Hynix HMAA4GS6CJR8N-XN 32GB

报告一个错误

更快的读取速度，GB/s

16.4 10.1

测试中的平均数值
更快的写入速度，GB/s

13.7 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 56
读取速度，GB/s

10.1 16.4
写入速度，GB/s

7.8 13.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2070 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 16ATF4G64HZ-3G2B2 32GB

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Samsung M393B1K70CH0-YH9 8GB

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SK Hynix HMAA4GS6CJR8N-XN 32GB

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Kingston 9905403-444.A00LF 4GB

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Kingmax Semiconductor GLLF62F-D8---------- 4GB

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G Skill Intl F4-3200C14-16GTZN 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CB8GS2400.C8D 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CM4B8G2J2666A15D 8GB

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Apacer Technology 78.C1GMM.DFW0C 8GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMW64GX4M8A2666C16 8GB

Corsair CMW64GX4M8A2666C16 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB