Samsung M393B1K70CH0-YH9 8GB vs Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 49

左右 -36% 更低的延时
更快的读取速度，GB/s

17.1 10.1

测试中的平均数值
更快的写入速度，GB/s

11.0 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 36
读取速度，GB/s

10.1 17.1
写入速度，GB/s

7.8 11.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3009

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK64GX4M8A2400C14 8GB

Corsair CMK64GX4M8A2400C14 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-2666C18-32GRS 32GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Transcend Information JM2400HLB-8G 8GB

Transcend Information JM2400HLB-8G 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Teikon TMA451S6AFR8N-TFSC 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFRA266.M16FR 16GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB