Samsung M393B1K70QB0-CK0 8GB vs Corsair CMK16GX4M2E4333C19 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Corsair CMK16GX4M2E4333C19 8GB

需要考虑的原因
Corsair CMK16GX4M2E4333C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 47

左右 -88% 更低的延时
更快的读取速度，GB/s

16.5 10.4

测试中的平均数值
更快的写入速度，GB/s

12.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK16GX4M2E4333C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 25
读取速度，GB/s

10.4 16.5
写入速度，GB/s

7.8 12.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3065

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

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Samsung M471A5244CB0-CWE 4GB

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Micron Technology 4ATF51264HZ-2G6E1 4GB

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Corsair CMN32GX4M2Z3600C16 16GB

Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology CT102464BA160B.M16 8GB

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Apacer Technology 78.CAGRN.40C0B 8GB

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Essencore Limited KD48GU88A-26N1600 8GB

Essencore Limited KD48GU88A-26N1600 8GB