Samsung M393B2G70BH0-CH9 16GB vs Corsair CMN32GX4M2Z3600C16 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Corsair CMN32GX4M2Z3600C16 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3600C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的读取速度，GB/s

18.6 8

测试中的平均数值
更快的写入速度，GB/s

15.8 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Corsair CMN32GX4M2Z3600C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

8.0 18.6
写入速度，GB/s

7.3 15.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 3800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB