Samsung M393B1K70QB0-CK0 8GB vs Corsair CMWX8GD3200C16W2E 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMWX8GD3200C16W2E 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Corsair CMWX8GD3200C16W2E 8GB

需要考虑的原因
Corsair CMWX8GD3200C16W2E 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

15.1 10.4

测试中的平均数值
更快的写入速度，GB/s

13.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Corsair CMWX8GD3200C16W2E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

10.4 15.1
写入速度，GB/s

7.8 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2800C14D4/4GX 4GB

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A-DATA Technology DOVF1B163G2G 2GB

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Mushkin 991586 2GB

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AMD R538G1601U2S 8GB

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Crucial Technology CT16G4DFD8266.M16FR 16GB

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A-DATA Technology AO1P26KCST2-BZISHC 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB