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Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology BLS16G4S26BFSD.16FBD 16GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
Crucial Technology BLS16G4S26BFSD.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 47
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 34
  • 读取速度，GB/s
    10.4 left arrow 14.5
  • 写入速度，GB/s
    7.8 left arrow 9.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 2576

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Kingston 9965640-015.A00G 32GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMK32GX4M4A2400C16 8GB
Corsair CMK32GX4M4A2400C16 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK16GX4M2C3000C15 8GB
Corsair CMK16GX4M2C3000C15 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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Avant Technology J644GU44J2320NF 32GB
内存RAM
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Kingston 99P5474-014.A00LF 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
内存RAM