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Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB

Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology CT4G4DFS824A.C8FE 4GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 72
    左右 35% 更低的延时
Crucial Technology CT4G4DFS824A.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 72
  • 读取速度，GB/s
    10.4 left arrow 15.6
  • 写入速度，GB/s
    7.8 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 1728

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905622-025.A00G 4GB
Kingston 9905622-025.A00G 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-2400C14-16GRK 16GB
G Skill Intl F4-2400C14-16GRK 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMH32GX4M4E3200C16 8GB
Corsair CMH32GX4M4E3200C16 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
内存RAM