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PNY Electronics PNY 2GB
G Skill Intl F4-3733C17-8GTZA 8GB

PNY Electronics PNY 2GB vs G Skill Intl F4-3733C17-8GTZA 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
G Skill Intl F4-3733C17-8GTZA 8GB 需要考虑的原因
G Skill Intl F4-3733C17-8GTZA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    20.2 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 24
  • 读取速度，GB/s
    13.8 left arrow 20.2
  • 写入速度，GB/s
    8.4 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3744

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-3733C17-8GTZA 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-038.A00LF 4GB
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Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905703-011.A00G 16GB
Kingston 9905703-011.A00G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology GD2.1527WT.001 8GB
Apacer Technology GD2.1527WT.001 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Chun Well Technology Holding Limited D4U0836144B 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM