Samsung M393B1K70QB0-CK0 8GB vs Kingston M378A1K43CB2-CRC 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

更快的写入速度，GB/s

7.8 6.5

测试中的平均数值

Kingston M378A1K43CB2-CRC 8GB

需要考虑的原因
Kingston M378A1K43CB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 47

左右 -96% 更低的延时
更快的读取速度，GB/s

13.9 10.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Kingston M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 24
读取速度，GB/s

10.4 13.9
写入速度，GB/s

7.8 6.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 2197

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMU16GX4M2D3200C16 8GB

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Corsair CMD128GX4M8A2666C15 16GB

Corsair CMD128GX4M8A2666C15 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

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Kingston 99U5584-007.A00LF 4GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB