Samsung M393B1K70QB0-CK0 8GB vs Kingston XWM8G1-MIE 32GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Kingston XWM8G1-MIE 32GB

需要考虑的原因
Kingston XWM8G1-MIE 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 47

左右 -57% 更低的延时
更快的读取速度，GB/s

16.9 10.4

测试中的平均数值
更快的写入速度，GB/s

16.0 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Kingston XWM8G1-MIE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 30
读取速度，GB/s

10.4 16.9
写入速度，GB/s

7.8 16.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 3704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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Corsair CMV16GX4M1A2133C15 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston XVTW4H-MIE 32GB

Kingston XVTW4H-MIE 32GB

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SpecTek Incorporated ?????????????????? 2GB

Corsair CMT64GX4M2C3600C18 32GB

Corsair CMT64GX4M2C3600C18 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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OCMEMORY OCM3200CL16D-16GBN 8GB