Samsung M393B1K70QB0-CK0 8GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Micron Technology 16ATF2G64AZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 47

左右 -31% 更低的延时
更快的读取速度，GB/s

18.6 10.4

测试中的平均数值
更快的写入速度，GB/s

15.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 36
读取速度，GB/s

10.4 18.6
写入速度，GB/s

7.8 15.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2169 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV16GX4M1A2133C15 16GB

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Crucial Technology 8G4US2400.M8B1 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB