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Samsung M393B2G70BH0-CK0 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology V-GeN D4V16GL24A8R 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 68
    左右 21% 更低的延时
Micron Technology V-GeN D4V16GL24A8R 16GB 需要考虑的原因
Micron Technology V-GeN D4V16GL24A8R 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 68
  • 读取速度，GB/s
    9.2 left arrow 16.9
  • 写入速度，GB/s
    8.1 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2007

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1G70BH0-YK0 8GB
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A-DATA Technology DOVF1B163G2G 2GB
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 99U5474-010.A00LF 2GB
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内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
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Elpida EBJ81UG8BBU0-GN-F 8GB
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Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM
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Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM