Samsung M393B1K70QB0-CK0 8GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 47

左右 -7% 更低的延时
更快的读取速度，GB/s

10.6 10.4

测试中的平均数值
更快的写入速度，GB/s

8.8 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 44
读取速度，GB/s

10.4 10.6
写入速度，GB/s

7.8 8.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 2374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston XVTW4H-MIE 32GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Gloway International (HK) STK2133C15-8GB 8GB