Samsung M393B1K70QB0-CK0 8GB vs Micron Technology AFLD48VH1P 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Micron Technology AFLD48VH1P 8GB

需要考虑的原因
Micron Technology AFLD48VH1P 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 47

左右 -96% 更低的延时
更快的读取速度，GB/s

15.7 10.4

测试中的平均数值
更快的写入速度，GB/s

11.4 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Micron Technology AFLD48VH1P 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 24
读取速度，GB/s

10.4 15.7
写入速度，GB/s

7.8 11.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 2133 2OZ 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology AFLD48VH1P 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

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G Skill Intl F4-2666C15-4GVR 4GB

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G Skill Intl F4-3466C16-8GVK 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

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