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Samsung M393B2G70BH0-CH9 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Samsung M393B2G70BH0-CH9 16GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 26
  • 读取速度，GB/s
    8.0 left arrow 18.9
  • 写入速度，GB/s
    7.3 left arrow 16.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3866

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Corsair CM3X4GBA1600C9V4 4GB
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Apacer Technology 78.C2GFA.AF30B 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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内存RAM
Corsair VSA2GSDS667C4 2GB
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Mushkin 991586 2GB
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Kingston 9905630-051.A00G 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Crucial Technology CT8G4SFD8213.C16FHP 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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Kingston 9965662-012.A01G 16GB
内存RAM
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Ramaxel Technology RMT3010EC58E8F1333 2GB
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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
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Strontium EVMT8G1600U86S 8GB
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Corsair CMSX32GX4M2A2666C18 16GB
内存RAM