Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Samsung M393B2G70BH0-CH9 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 -18% 更低的延时
更快的读取速度，GB/s

14.3 8

测试中的平均数值
更快的写入速度，GB/s

11.4 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 28
读取速度，GB/s

8.0 14.3
写入速度，GB/s

7.3 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMK128GX4M8Z2933C16 16GB

Corsair CMK128GX4M8Z2933C16 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Crucial Technology RM51264BA1339.16FD 4GB

Crucial Technology RM51264BA1339.16FD 4GB

Apacer Technology 78.CAGP7.40C0B 8GB

Apacer Technology 78.CAGP7.40C0B 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston 9965669-027.A00G 16GB

Kingston 9965669-027.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3600C16-16GTRGC 16GB

G Skill Intl F4-3600C16-16GTRGC 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB