Samsung M3 93T5750CZA-CE6 2GB vs Nanya Technology NT1GT64UH8D0FN-AD 1GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Nanya Technology NT1GT64UH8D0FN-AD 1GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 1,569.0

测试中的平均数值

Nanya Technology NT1GT64UH8D0FN-AD 1GB

需要考虑的原因
Nanya Technology NT1GT64UH8D0FN-AD 1GB

报告一个错误

低于PassMark测试中的延时，ns

66 77

左右 -17% 更低的延时
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Nanya Technology NT1GT64UH8D0FN-AD 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

77 66
读取速度，GB/s

3,405.2 3,316.1
写入速度，GB/s

2,622.0 1,569.0
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

763 472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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