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Samsung M393B2G70BH0-CH9 16GB
Samsung M393A1K43BB0-CRC 8GB

Samsung M393B2G70BH0-CH9 16GB vs Samsung M393A1K43BB0-CRC 8GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 48
    左右 31% 更低的延时
Samsung M393A1K43BB0-CRC 8GB 需要考虑的原因
Samsung M393A1K43BB0-CRC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.6 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Samsung M393A1K43BB0-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 48
  • 读取速度，GB/s
    8.0 left arrow 11.6
  • 写入速度，GB/s
    7.3 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 2466

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Samsung M393A1K43BB0-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905701-029.A00G 16GB
Kingston 9905701-029.A00G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
Elpida EBJ41EF8BCFA-DJ-F 4GB
Elpida EBJ41EF8BCFA-DJ-F 4GB
SK Hynix HMT351S6AFR8C-G7 4GB
SK Hynix HMT351S6AFR8C-G7 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMSX16GX4M1A2666C18 16GB
Corsair CMSX16GX4M1A2666C18 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C17-8GTZR 8GB
G Skill Intl F4-4000C17-8GTZR 8GB
内存RAM