Samsung M393B2G70BH0-CH9 16GB vs Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 36

左右 8% 更低的延时

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

报告一个错误

更快的读取速度，GB/s

19.4 8

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 36
读取速度，GB/s

8.0 19.4
写入速度，GB/s

7.3 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3351

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Corsair CM3X2G1600C9 2GB

Corsair CM3X2G1600C9 2GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Kingston KHX3466C16D4/8GX 8GB

Kingston KHX3466C16D4/8GX 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Kingston 9905702-017.A00G 8GB

Kingston 9905702-017.A00G 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Transcend Information JM3200HLE-32GK 16GB

Transcend Information JM3200HLE-32GK 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB