Samsung M393B2G70BH0-CK0 16GB vs Apacer Technology 78.BAGN8.40C0B 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

更快的写入速度，GB/s

8.1 8.0

测试中的平均数值

Apacer Technology 78.BAGN8.40C0B 4GB

需要考虑的原因
Apacer Technology 78.BAGN8.40C0B 4GB

报告一个错误

低于PassMark测试中的延时，ns

50 54

左右 -8% 更低的延时
更快的读取速度，GB/s

9.6 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Apacer Technology 78.BAGN8.40C0B 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 50
读取速度，GB/s

9.2 9.6
写入速度，GB/s

8.1 8.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2111

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4Z2933C16 8GB

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Kingston MSI16D3LS1KBG/8G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965600-023.A00G 16GB

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Kingston 99P5474-014.A00LF 4GB

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Golden Empire CL16-16-16 D4-3000 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 99U5428-018.A00LF 8GB

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G Skill Intl F4-3200C16-16GTRS 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

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Kingston 9905701-020.A00G 16GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Corsair CMSX4GX3M1A1600C9 4GB

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB