Samsung M393B2G70BH0-CK0 16GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的读取速度，GB/s

18.5 9.2

测试中的平均数值
更快的写入速度，GB/s

15.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

9.2 18.5
写入速度，GB/s

8.1 15.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Apacer Technology GD2.0927WH.001 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-2133C15-8GIS 8GB