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Samsung M393B2G70BH0-CK0 16GB
Corsair CMD64GX4M4B2800C14 16GB

Samsung M393B2G70BH0-CK0 16GB vs Corsair CMD64GX4M4B2800C14 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Corsair CMD64GX4M4B2800C14 16GB 需要考虑的原因
Corsair CMD64GX4M4B2800C14 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 54
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Corsair CMD64GX4M4B2800C14 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 25
  • 读取速度，GB/s
    9.2 left arrow 15.0
  • 写入速度，GB/s
    8.1 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3085

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Corsair CMD64GX4M4B2800C14 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5734-014.A00G 16GB
Kingston 99U5734-014.A00G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMD64GX4M4B2800C14 16GB
Corsair CMD64GX4M4B2800C14 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
AMD R948G3206U2S 8GB
AMD R948G3206U2S 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information JM2666HLE-16G 16GB
Transcend Information JM2666HLE-16G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2G4000C16 8GB
Corsair CMK16GX4M2G4000C16 8GB
内存RAM