Samsung M393B2G70BH0-CK0 16GB vs Corsair CMK16GX4M2C3200C16 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Corsair CMK16GX4M2C3200C16 8GB

Corsair CMK16GX4M2C3200C16 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Corsair CMK16GX4M2C3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2C3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 54

左右 -170% 更低的延时
更快的读取速度，GB/s

21 9.2

测试中的平均数值
更快的写入速度，GB/s

17.5 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Corsair CMK16GX4M2C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 20
读取速度，GB/s

9.2 21.0
写入速度，GB/s

8.1 17.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Corsair CMK32GX4M4B3866C18 8GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Kingston 99U5429-007.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMW16GX4M2E3200C16 8GB

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Netac Technology Co Ltd E40832A 8GB

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Corsair CM4X8GF2400C16S4 8GB