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Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology BLM8G44C19U4B.M8FE1 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Crucial Technology BLM8G44C19U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 54
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 25
  • 读取速度，GB/s
    9.2 left arrow 17.9
  • 写入速度，GB/s
    8.1 left arrow 16.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3651

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
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Unifosa Corporation HU564404EP0200 4GB
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Kingston 9965640-013.A01G 32GB
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Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Corsair CMT16GX4M2C3200C16 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Gloway International (HK) STKD4GAM2133-F 8GB
Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM