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Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB

Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology BLS16G4D26BFSE.16FE 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Crucial Technology BLS16G4D26BFSE.16FE 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSE.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 54
    左右 -145% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 22
  • 读取速度，GB/s
    9.2 left arrow 16.9
  • 写入速度，GB/s
    8.1 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3139

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
内存RAM
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X32GC3200C16K2E 32GB
Corsair CM4X32GC3200C16K2E 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905743-044.A00G 16GB
Kingston 9905743-044.A00G 16GB
内存RAM