Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology BLS16G4D26BFSE.16FE 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology BLS16G4D26BFSE.16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSE.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 54

左右 -145% 更低的延时
更快的读取速度，GB/s

16.9 9.2

测试中的平均数值
更快的写入速度，GB/s

13.7 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 22
读取速度，GB/s

9.2 16.9
写入速度，GB/s

8.1 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 3139

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB