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Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB

Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT16G4DFD824A.M16FA 16GB

总分
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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Crucial Technology CT16G4DFD824A.M16FA 16GB 需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 26
  • 读取速度，GB/s
    9.2 left arrow 16.5
  • 写入速度，GB/s
    8.1 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2891

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Crucial Technology CT16G4DFD824A.M16FA 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Samsung M393B1K70CH0-CH9 8GB
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Essencore Limited KD44GU480-26N160T 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-4133C19-8GTZKKF 8GB
内存RAM
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Kingston 99U5474-023.A00LF 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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Wilk Elektronik S.A. GR2666S464L19/16G 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Kingston KHX1866C11D3/4G 4GB
Kingston KHX1866C11D3/4G 4GB
Kingston KHX1866C9D3/4GX 4GB
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内存RAM
Nanya Technology M2F8G64CB8HB5N-DI 8GB
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G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
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Elpida EBE21UE8ACUA-8G-E 2GB
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Kingston RB26D4U9D8MEH-16 16GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
Transcend Information JM3200HLG-8G 8GB
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