Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT4G4DFS824A.C8FBR2 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

16.1 9.2

测试中的平均数值
更快的写入速度，GB/s

10.1 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.2 16.1
写入速度，GB/s

8.1 10.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R748G2606U2S 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMK16GX4M1A2400C14 16GB

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Samsung M393B2G70BH0-CH9 16GB

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Apacer Technology D12.2356WS.001 8GB

Apacer Technology D12.2356WS.001 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston KV0M5R-HYD 8GB

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Kingston 9905403-156.A00LF 2GB

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Kingston 9905598-028.A00G 8GB