Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT8G4DFS8213.C8FH1 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FH1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FH1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 -86% 更低的延时
更快的读取速度，GB/s

14.8 9.2

测试中的平均数值
更快的写入速度，GB/s

8.4 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 29
读取速度，GB/s

9.2 14.8
写入速度，GB/s

8.1 8.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-8GTRG 8GB

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Corsair CMV4GX4M1A2666C18 4GB

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Corsair CMX4GX3M2A1600C9 2GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M471A1K43CBCBCRC 8GB

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G Skill Intl F4-3200C15-4GRKD 4GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Kingston 99U5403-465.A00LF 8GB

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Essencore Limited KD44GU481-26N1600 4GB

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Kingston 9965433-034.A00LF 4GB

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Teikon TMA851S6AFR6N-UHHC 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGP7.AZC0B 8GB

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