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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-32GVK 32GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3200C16-32GVK 32GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-3200C16-32GVK 32GB 需要考虑的原因
G Skill Intl F4-3200C16-32GVK 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 54
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-32GVK 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 29
  • 读取速度，GB/s
    9.2 left arrow 17.7
  • 写入速度，GB/s
    8.1 left arrow 14.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3728

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-3200C16-32GVK 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
内存RAM
A-DATA Technology DDR2 1066G 2GB
A-DATA Technology DDR2 1066G 2GB
A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR3 1333+ 2GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Corsair CM3B8G2A1333L9 8GB
Corsair CM3B8G2A1333L9 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X8GD3200C16K4 8GB
Corsair CM4X8GD3200C16K4 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM