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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZ 16GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3466C16-16GTZ 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-3466C16-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3466C16-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 54
    左右 -135% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 23
  • 读取速度，GB/s
    9.2 left arrow 17.9
  • 写入速度，GB/s
    8.1 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3356

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-3466C16-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
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内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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内存RAM
Kingston 9905469-143.A00LF 4GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Essencore Limited KD48GU880-32A160U 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Super Talent F24EB8GS 8GB
Super Talent F24EB8GS 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A
内存RAM
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Kingston 99U5458-002.A00LF 2GB
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Kingston 9905598-006.A00G 8GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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INTENSO 5641160 8GB
内存RAM