RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
比较
Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
54
左右 -59% 更低的延时
更快的读取速度,GB/s
11.1
9.2
测试中的平均数值
更快的写入速度,GB/s
9.5
8.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
34
读取速度,GB/s
9.2
11.1
写入速度,GB/s
8.1
9.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2105
2319
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM的比较
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Crucial Technology CT25664BA1339.M8FK 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Kingston KVR533D2N4 512MB
Smart Modular SMS4TDC3C0K0446SCG 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix GKE160UD102408-2400 16GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMW64GX4M8X3600C18 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK32GX4M4C3000C15 8GB
SK Hynix DDR2 800 2G 2GB
Mushkin MR[ABC]4U266GHHF8G 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMSO32GX4M2A2133C15 16GB
Kingston HX316C10F/8 8GB
Corsair CM4X16GE2133C13K8 16GB
报告一个错误
×
Bug description
Source link