Samsung M393B2G70BH0-CK0 16GB vs ISD Technology Limited IM44GU48A30-GIIHM 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

ISD Technology Limited IM44GU48A30-GIIHM 4GB

需要考虑的原因
ISD Technology Limited IM44GU48A30-GIIHM 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

14.9 9.2

测试中的平均数值
更快的写入速度，GB/s

9.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.2 14.9
写入速度，GB/s

8.1 9.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M378A1G44BB0-CWE 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMW16GX4M2E3200C16 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

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Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

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