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Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C15D4/4G 4GB

Samsung M393B2G70BH0-CK0 16GB vs Kingston KHX2666C15D4/4G 4GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Kingston KHX2666C15D4/4G 4GB 需要考虑的原因
Kingston KHX2666C15D4/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 54
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C15D4/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 32
  • 读取速度，GB/s
    9.2 left arrow 17.1
  • 写入速度，GB/s
    8.1 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2929

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Kingston KHX2666C15D4/4G 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C15D4/4G 4GB
Kingston KHX2666C15D4/4G 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
Kingston 99U5701-036.A00G 16GB
Kingston 99U5701-036.A00G 16GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
G Skill Intl F4-3200C15-16GTZSW 16GB
G Skill Intl F4-3200C15-16GTZSW 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM
Gloway International (HK) STK2400CL17SNB16GB 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15-8GVB 8GB
G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
内存RAM