Samsung M393B2G70BH0-CK0 16GB vs Kingston KHX3000C15D4/4GX 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Kingston KHX3000C15D4/4GX 4GB

需要考虑的原因
Kingston KHX3000C15D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 54

左右 -64% 更低的延时
更快的读取速度，GB/s

16.5 9.2

测试中的平均数值
更快的写入速度，GB/s

12.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingston KHX3000C15D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 33
读取速度，GB/s

9.2 16.5
写入速度，GB/s

8.1 12.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information TS512MSK64W6H 4GB

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Kllisre KRE-D3U1600M/8G 8GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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SK Hynix HMA82GS6CJR8N-UH 16GB

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SK Hynix HMA82GS6AFR8N-UH 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M471A1G44AB0-CWE 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB