Samsung M393B2G70BH0-CK0 16GB vs Kingston XK2M26-MIE-NX 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Kingston XK2M26-MIE-NX 16GB

需要考虑的原因
Kingston XK2M26-MIE-NX 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的读取速度，GB/s

19.2 9.2

测试中的平均数值
更快的写入速度，GB/s

11.8 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kingston XK2M26-MIE-NX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

9.2 19.2
写入速度，GB/s

8.1 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 3256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CM4X16GC3000C16K8 16GB

Corsair CM4X16GC3000C16K8 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMK128GX4M8A2133C13 16GB

Corsair CMK128GX4M8A2133C13 16GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB