Samsung M393B2G70BH0-CK0 16GB vs Kllisre 8ATF1G64AZ-2G6H1 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Kllisre 8ATF1G64AZ-2G6H1 8GB

需要考虑的原因
Kllisre 8ATF1G64AZ-2G6H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 54

左右 -10% 更低的延时
更快的读取速度，GB/s

10.8 9.2

测试中的平均数值
更快的写入速度，GB/s

8.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 49
读取速度，GB/s

9.2 10.8
写入速度，GB/s

8.1 8.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

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Kingston 99U5584-001.A00LF 4GB

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Kingston 9905403-447.A00LF 4GB

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Kingston 9965516-430.A00G 16GB

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Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

SK Hynix HMT451U7BFR8C-RD 4GB

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Super Talent F3200UA8G 8GB

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Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB