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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 54
    左右 -10% 更低的延时
  • 更快的读取速度，GB/s
    10.7 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 49
  • 读取速度，GB/s
    9.2 left arrow 10.7
  • 写入速度，GB/s
    8.1 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2504

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
V-GEN D4H4GL30A8TS5 4GB
V-GEN D4H4GL30A8TS5 4GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston ACR26D4U9D8MH-16 16GB
Kingston ACR26D4U9D8MH-16 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
Crucial Technology BL8G26C16U4B.8FE 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM