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Samsung M393B2G70BH0-CK0 16GB
Panram International Corporation L421008G4C1528K34O8A 8GB

Samsung M393B2G70BH0-CK0 16GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Panram International Corporation L421008G4C1528K34O8A 8GB 需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 54
    左右 -145% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Panram International Corporation L421008G4C1528K34O8A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 22
  • 读取速度，GB/s
    9.2 left arrow 17.5
  • 写入速度，GB/s
    8.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3013

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Panram International Corporation L421008G4C1528K34O8A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905702-135.A00G 8GB
Kingston 9905702-135.A00G 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMK16GX4M2K3600C19 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Apacer Technology 78.BAGSR.4030B 4GB
Apacer Technology 78.BAGSR.4030B 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C15-16GTZKO 16GB
G Skill Intl F4-3200C15-16GTZKO 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston HP32D4U8S8ME-8X 8GB
Kingston HP32D4U8S8ME-8X 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
内存RAM