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Samsung M393B2G70BH0-CK0 16GB
Samsung M393A2K43DB3-CWE 16GB
比较
Samsung M393B2G70BH0-CK0 16GB vs Samsung M393A2K43DB3-CWE 16GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
Samsung M393A2K43DB3-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
更快的写入速度,GB/s
8.1
7.7
测试中的平均数值
需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB
报告一个错误
低于PassMark测试中的延时,ns
53
54
左右 -2% 更低的延时
更快的读取速度,GB/s
10.3
9.2
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Samsung M393A2K43DB3-CWE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
53
读取速度,GB/s
9.2
10.3
写入速度,GB/s
8.1
7.7
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2105
2356
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Samsung M393A2K43DB3-CWE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M393A2K43DB3-CWE 16GB
Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-4400C19-16GTZR 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KHX2666C13D4/8GX 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CML8GX3M2A1600C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A2K43DB1-CVF 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C18-8GRS 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CM4X8GF2666Z16K4 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C16-4GRK 4GB
报告一个错误
×
Bug description
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