Samsung M393B2G70BH0-CK0 16GB vs Teclast TLD416G26A30 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Teclast TLD416G26A30 16GB

需要考虑的原因
Teclast TLD416G26A30 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的读取速度，GB/s

15.9 9.2

测试中的平均数值
更快的写入速度，GB/s

13.1 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Teclast TLD416G26A30 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

9.2 15.9
写入速度，GB/s

8.1 13.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3800C14-8GTZN 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Micron Technology AFLD416EH1P 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK4GX4M1A2400C16 4GB

Corsair CMK4GX4M1A2400C16 4GB

Kingston ACR16D3LS1KNG/4G 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB