Samsung M393B2G70BH0-YK0 16GB vs Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

63 76

左右 17% 更低的延时

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

报告一个错误

更快的读取速度，GB/s

15.1 8.1

测试中的平均数值
更快的写入速度，GB/s

7.9 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 76
读取速度，GB/s

8.1 15.1
写入速度，GB/s

7.5 7.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 1859

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F6451U64F9333G 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Corsair CMW16GX4M2K4266C19 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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AMD R5S38G1601U2S 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston KV0M5R-HYD 8GB

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Asgard VMA45UG-MIC1U22T2 8GB

Asgard VMA45UG-MIC1U22T2 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-3600C16-16GTZNC 16GB