RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-YK0 16GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Compare
Samsung M393B2G70BH0-YK0 16GB vs Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Overall score
Samsung M393B2G70BH0-YK0 16GB
Overall score
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-YK0 16GB
Report a bug
Below the latency in the PassMark tests, ns
63
76
Around 17% lower latency
Reasons to consider
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Report a bug
Faster reading speed, GB/s
15.1
8.1
Average value in the tests
Faster write speed, GB/s
7.9
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-YK0 16GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
63
76
Read speed, GB/s
8.1
15.1
Write speed, GB/s
7.5
7.9
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1945
1859
Samsung M393B2G70BH0-YK0 16GB RAM comparisons
Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ21UE8BDF0-DJ-F 2GB
Apacer Technology 76.B305G.D500B 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Unifosa Corporation HU564404EP0200 4GB
AMD R748G2133U2S-UO 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston KF2666C16D4/8G 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CB8GU2400.C8D 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905668-002.A00G 8GB
Corsair CMZ16GX3M2A1866C10 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
G Skill Intl F3-1600C11-4GIS 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Kingston KHX1600C9S3L/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Samsung M393B5170FH0-CK0 4GB
Kingston 9905599-020.A00G 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Report a bug
×
Bug description
Source link