Samsung M393B2G70DB0-CK0 16GB vs SK Hynix HMT42GR7BFR4C-RD 16GB

总分

Samsung M393B2G70DB0-CK0 16GB

Samsung M393B2G70DB0-CK0 16GB

总分

SK Hynix HMT42GR7BFR4C-RD 16GB

SK Hynix HMT42GR7BFR4C-RD 16GB

差异规格评论

差异

Samsung M393B2G70DB0-CK0 16GB

需要考虑的原因
Samsung M393B2G70DB0-CK0 16GB

报告一个错误

更快的写入速度，GB/s

10.0 9.4

测试中的平均数值

SK Hynix HMT42GR7BFR4C-RD 16GB

需要考虑的原因
SK Hynix HMT42GR7BFR4C-RD 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 -11% 更低的延时
更快的读取速度，GB/s

12.2 10.1

测试中的平均数值
更高的内存带宽，mbps

14900 12800

左右 1.16 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70DB0-CK0 16GB

SK Hynix HMT42GR7BFR4C-RD 16GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

31 28
读取速度，GB/s

10.1 12.2
写入速度，GB/s

10.0 9.4
内存带宽，mbps

12800 14900

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
时序/时钟速度

9-9-9-24 / 1600 MHz 9-10-9-28 / 1866 MHz
排名PassMark (越多越好)

2326 2601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Corsair CM4X8GF2666C16K8 8GB

Corsair CM4X8GF2666C16K8 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB