Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M393B2G70DB0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M393B2G70DB0-CK0 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Samsung M393B2G70DB0-CK0 16GB

Samsung M393B2G70DB0-CK0 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33% 更高的带宽

Samsung M393B2G70DB0-CK0 16GB

需要考虑的原因
Samsung M393B2G70DB0-CK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 35

左右 -13% 更低的延时
更快的读取速度，GB/s

10.1 9.8

测试中的平均数值
更快的写入速度，GB/s

10.0 7.9

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M393B2G70DB0-CK0 16GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

35 31
读取速度，GB/s

9.8 10.1
写入速度，GB/s

7.9 10.0
内存带宽，mbps

17000 12800

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2126 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905624-033.A00G 8GB

Kingston 9905624-033.A00G 8GB

Unigen Corporation U51U7200N8DD-BDH 4GB

Unigen Corporation U51U7200N8DD-BDH 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3000C16-8GSXFB 8GB

G Skill Intl F4-3000C16-8GSXFB 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB